求一段论文的汉译英翻译,谢啦(2)
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发布时间：2022-05-07 15:22
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热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:02
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
热心网友
时间：2023-11-05 16:03
Although some literature that the author created in their respective semiconctor lasers in the important role played by, but the fact is no one on semiconctor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconctor laser All the technology issues. Therefore, it can be that the semiconctor laser is the emergence and development of many co-workers on the crystallization of wisdom.
As early as in September 1953, the U.S. Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconctor proced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconctor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as 2001.
Ecsle Normale Superieure and Pierre Aigrain in 1956 had encouraged the U.S. radio company [RCA] Pankove start manufacturing the semiconctor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconctor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconctor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconctor lasers, he is the first time in 1958 published an article in the semiconctor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconctor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Proced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconctor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconctor laser experiment with the theory of the article is more active semiconctor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconctor (such as GaAs, InP, etc.) than the indirect bandgap semiconctor (such as Ge, Si, etc.) is more suited to proce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconctor laser.
1960 Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconctor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral part.
1961 Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconctor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconctor laser research has played an important guiding role of theory.
To sum up, in theory, that should be in the semiconctor laser direct bandgap semiconctor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.
