semiconductor science and technology 收版面费吗
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发布时间：2022-04-28 17:59
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时间：2023-09-13 19:30
期刊名 semiconctor science and technology 出版周期: 月刊
中科院杂志分区 材料科学：综合分类下的 3 区期刊
近四年SCI 影响因子:
2013年度 2012年度 2011年度 2010年度
2.206 1.921 1.723 1.323
出版社或管理机构 杂志由 IOP PUBLISHING LTD 出版或管理。 ISSN号：0268-1242
杂志简介/稿件收录要求 Subject coverage. Experimental and theoretical studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconctors; computational semiconctor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconctor and insulator-semiconctor junctions; all multi-layered structures involving semiconctor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. Physics of semiconctor electronic and optoelectronic devices, including theoretical modelling and experimental demonstration; all aspects of the technology of semiconctor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconctor structures incorporating Langmuir- Blodgett films; resists, lithography and metallization where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterization of materials and device structures. Materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability. Papers will normally be categorized under one of four headings: electrical and optical properties, devices, crystal growth and materials, and reliability.
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